Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof

ABSTRACT

Certain applicator liquids and method of making the applicator liquids are described. The applicator liquids can be used to form nanotube films or fabrics of controlled properties. An applicator liquid for preparation of a nanotube film or fabric includes a controlled concentration of nanotubes dispersed in a liquid medium containing water. The controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit under 35 U.S.C. §119(e) of U.S.Provisional Patent Application Nos. 60/636,673, filed Dec. 16, 2004, and60/704,858, filed Aug. 2, 2005, both of which are assigned to theassignee of this application, and both of which are incorporated hereinby reference in their entirety.

This application is related to the following applications, all of whichare assigned to the assignee of this application, and all of which areincorporated by reference in their entirety:

Nanotube Films and Articles (U.S. Pat. No. 6,706,402) filed Apr. 23,2002;

Methods of Nanotube Films and Articles (U.S. Pat. No. 6,835,591) filedApr. 23, 2002; and

Patterning of Nanoscopic Articles (U.S. patent application Ser. No.10/936,119) filed on Sep. 8, 2004.

BACKGROUND

1. Technical Field

This invention describes applicator liquids for use in the preparationof nanotube films. Such applicator liquids are used in creating filmsand fabrics of nanotubes or mixtures of nanotubes and other materials ona variety of substrates including silicon, plastics, paper and othermaterials. In particular, the invention describes applicator liquidscontaining nanotubes for use in electronics fabrication processes.Furthermore, the applicator liquids meet or exceed specifications for asemiconductor fabrication facility, including a class 1 environment.

2. Discussion of Related Art

Nanotubes are useful for many applications; due to their electricalproperties nanotubes may be used as conducting and semi-conductingelements in numerous electronic elements. Single walled carbon nanotubes(SWNTs) have emerged in the last decade as advanced materials exhibitinginteresting electrical, mechanical and optical properties. However, theinclusion or incorporation of the SWNT as part of standardmicroelectronic fabrication process has faced challenges due to a lackof a readily available application method compatible with existingsemiconductor equipment and tools and meeting the stringent materialsstandards required in the electronic fabrication process. Standards forsuch a method include, but are not limited to, non-toxicity,non-flammability, ready availability in CMOS or electronics grades,substantially free from suspended particles (including but not limitedto submicro- and nano-scale particles and aggregates), and compatiblewith spin coating tracks and other tools currently used by thesemiconductor industry.

Individual nanotubes may be used as conducting elements, e.g. as achannel in a transistor, however the placement of millions of catalystparticles and the growth of millions of properly aligned nanotubes ofspecific length presents serious challenges. U.S. Pat. Nos. 6,643,165and 6,574,130 describe electromechanical switches using flexiblenanotube-based fabrics (nanofabrics) derived from solution-phasecoatings of nanotubes in which the nanotubes first are grown, thenbrought into solution, and applied to substrates at ambienttemperatures. Nanotubes may be derivatized in order to facilitatebringing the tubes into solution, however in uses where pristinenanotubes are necessary, it is often difficult to remove thederivatizing agent. Even when removal of the derivatizing agent is notdifficult, such removal is an added, time-consuming step.

Generally, until now the solvents used to disperse the carbon nanotubesare organic solvents such as orthodichlorobenzene (ODCB) and chloroform.The solutions are stable but the solvents have the disadvantage of notsolubilizing clean carbon nanotubes which are free of amorphous carbon.We have developed a method to remove most of the amorphous carbon andsolubilize the carbon nanotubes at high concentrations in water via pHmanipulation.

There have been few attempts to disperse SWNTs in aqueous andnon-aqueous solvents. Chen et al. first reported solubilization ofshortened, end-functionalized SWNTs in solvents such as chloroform,dichloromethane, orthodichlorobenzene (ODCB), CS₂, dimethyl formamide(DMF) and tetrahydrofuran (THF). See, “Solution Properties ofSingle-Walled Nanotubes,” Science 1998, 282, 95-98. Ausman et al.reported the use of SWNTs solutions using sonication. The solvents usedwere N-methylpyrrolidone (NMP), DMF, hexamethylphosphoramide,cyclopentanone, tetramethylene sulfoxide and ε-caprolactone (listed indecreasing order of carbon nanotube solvation). Ausman at el. generallyconclude that solvents with good Lewis basicity (i.e., availability of afree electron pair without hydrogen donors) are good solvents for SWNTs.See, “Organic Solvent Dispersions of Single-Walled Carbon Nanotubes:Toward Solutions of Pristine Nanotubes,” J. Phys. Chem. B 2000, 104,8911. Other early approaches involved the fluorination or sidewallcovalent derivatization of SWNTs with aliphatic and aromatic moieties toimprove nanotube solubility. See, e.g., E. T. Mickelson et al.,“Solvation of Fluorinated Single-Wall Carbon Nanotubes in AlcoholSolvents,” J. Phys. Chem. B 1999, 103, 4318-4322.

Full-length soluble SWNTs can be prepared by ionic functionalization ofthe SWNT ends dissolved in THF and DMF. See, Chen et al., “Dissolutionof Full-Length Single-Walled Carbon Nanotubes,” J. Phys. Chem. B 2001,105, 2525-2528 and J. L. Bahr et al Chem. Comm. 2001, 193-194. Chen etal. used HiPCO™ as-prepared (AP)-SWNTs and studied a wide range ofsolvents. (HiPCO™ is a trademark of Rice University for SWNTs preparedunder high pressure carbon monoxide decomposition). The solutions weremade using sonication.

Bahr et al. (“Dissolution Of Small Diameter Single-Wall Carbon NanotubesIn Organic Solvents,” Chem. Comm., 2001, 193-194) reported the mostfavorable solvation results using ODCB, followed by chloroform,methylnaphthalene, bromomethylnaphthalene, NMP and DMF as solvents.Subsequent work has shown that good solubility of AP-SWNT in ODCB is dueto sonication induced polymerization of ODCB, which then wraps aroundSWNTs, essentially producing soluble polymer wrapped (PW)-SWNTs. SeeNiyogi et al., “Ultrasonic Dispersions of Single-Walled CarbonNanotubes,” J. Phys. Chem. B 2003, 107, 8799-8804. Polymer wrappingusually affects sheet resistance of the SWNT network and may not beappropriate for electronic applications where low sheet resistance isdesired. See, e.g., A. Star et al., “Preparation and Properties ofPolymer-Wrapped Single-Walled Carbon Nanotubes,” Angew. Chem. Int. Ed.2001, 40, 1721-1725 and M. J. O'Connell et al., “ReversibleWater-Solubilization Of Single-Walled Carbon Nanotubes By PolymerWrapping,” Chem. Phys. Lett. 2001, 342, 265-271.

While these approaches were successful in solubilizing the SWNTs in avariety of organic solvents to practically relevant levels, all suchattempts resulted in the depletion of the π electrons that are essentialto retain interesting electrical and optical properties of nanotubes.Other earlier attempts involve the use of cationic, anionic or non-ionicsurfactants to disperse the SWNT in aqueous and non aqueous systems.See, Matarredona et al., “Dispersion of Single-Walled Carbon Nanotubesin Aqueous Solutions of the Anionic Surfactant,” J. Phys. Chem. B 2003,107, 13357-13367. While this type of approach has helped to retain theelectrical conductivity and optical properties of the SWNTs, most suchmethods leave halogens or alkali metals or polymeric residues, whichtend to severely hamper any meaningful use in microelectronicfabrication facilities.

SUMMARY OF THE INVENTION

There is a need for a method of distributing nanotubes in a liquidmedium for use in electronics applications. Such a method should allowfor removal of amorphous carbon, leaving carbon nanotubes, a highconcentration of CNTs in solution. Such an applicator liquid could beuseful for making high-uniformity nanotube fabrics on various substratesincluding silicon. The use of such an applicator liquid would requirefew applications (i.e. spin coat applications), to produce a fabric ofcontrollable sheet resistance with high uniformity. Such an applicatorliquid could have many other applications as well.

There remains a further need for methods that meet the criteria outlinedabove for low toxicity, purity, cleanliness, ease of handling andscalability.

One aspect of the invention is directed to an applicator liquidcontaining nanotubes and water useful in the preparation of nanotubefabrics and films. According to one aspect of the present invention, anapplicator liquid for use in an electronics fabrication process includesan aqueous liquid medium containing a plurality of nanotubes pretreatedto reduce the level of metal and particulate impurities to a preselectedlevel. The concentration of the nanotubes in the liquid medium is atcommercially meaningful levels, e.g., the nanotubes are at aconcentration of greater than 1 mg/L. The nanotubes are homogeneouslydistributed in the liquid medium without substantial precipitation orflocculation.

In one or more embodiments of the invention, an applicator liquid forpreparation of a nanotube film or fabric includes a controlledconcentration of nanotubes dispersed in water, wherein the controlledconcentration is sufficient to form a nanotube fabric or film ofpreselected density and uniformity. The nanotubes are at a concentrationof greater than 1 mg/L, or greater than 100 mg/L, or greater than 1000mg/L. The nanotubes are homogeneously distributed in water withoutprecipitation or flocculation.

In one or more embodiments, an applicator liquid for preparation of ananotube film includes a distribution of nanotubes in water, wherein thenanotubes remain separate from one another without precipitation orflocculation for a time sufficient to apply the applicator liquid to asurface.

In one aspect of the present invention, the applicator solution issubstantially free of particulate and metallic impurities. The level ofparticulate and metallic impurities is commensurate with preselectedfabrication requirements.

In another aspect of the invention, a nanotube composition is providedincluding a plurality of nanotubes in water medium, wherein thenanotubes are substantially separate from one another and homogeneouslydistributed throughout the water medium.

The fabrication processes can have varying requirements for solvent andraw material composition and purity. According to one aspect of thepresent invention, applicator solutions of varying composition andpurity are provided for use in these fabrication processes havingvarying processing specifications and environmental requirements.

According to one aspect of the present invention, methods andcompositions for creating nanotube applicator solutions for use infabrication facilities having high standards of non-toxicity and purityare provided. Such processes include semiconductor fabricationprocesses, for example, CMOS and advanced logic and memory fabrications.Such fabrication processes may produce devices having fine features,e.g., ≦250 nm.

According to other aspects of the present invention, the nanotubeapplicator solutions are of a purity that is suitable for use inelectronics fabrication facilities having less stringent standards forchemical composition and purity. Such processes include, for example,interconnect fabrication and fabrication of chemical and biologicalsensors.

BRIEF DESCRIPTION OF THE DRAWING

The invention is described with reference to the Drawing, which ispresented for the purpose of illustration only and which is not intendedto be limiting of the invention.

FIG. 1 illustrates a typical scanning electron micrograph (SEM) of ananotube fabric.

FIG. 2 illustrates a typical micrograph of a purified nanotube fabric.

FIG. 3A illustrates a micrograph of a nanotube fabric created with batchcentrifugation.

FIG. 3B illustrates a micrograph of the nanotube fabric of FIG. 3A athigher magnification.

FIG. 4A illustrates a micrograph of a nanotube fabric created withcontinuous flow centrifugation.

FIG. 4B illustrates a micrograph of the nanotube fabric of FIG. 4A athigher magnification.

DETAILED DESCRIPTION OF THE INVENTION

Nanotubes have been the focus of intense research efforts into thedevelopment of applications that take advantage of their electronic,biological, and/or material properties. In one or more embodiments, anapplicator liquid containing nanotubes is prepared in water. Theapplicator liquid can be a spin-coatable liquid that may be used tocreate nanotube films and fabrics of substantially uniform porosity.Certain embodiments provide applicator liquids having a purity levelthat is commensurate with the intended application. Other applicationsprovide applicator liquids meeting or exceeding specifications for class1 semiconductor fabrication.

In one or more embodiments, an applicator liquid includes liquid mediumcontaining single-walled nanotubes, multi-walled nanotubes, or mixturesthereof that is stable enough for certain intended applications, such asspin coating in a class 1 production facility. The nanotubes in theapplicator liquid remain suspended, dispersed, solvated or mixed in aliquid medium without substantial precipitation, flocculation or anyother macroscopic interaction that would interfere with the ability toapply the applicator liquid to a substrate and form a uniform porosity.If there were significant precipitation or aggregation of the nanotubes,the nanotubes would clump together and form non-uniform films, whichwould be undesirable. The nature by which the nanotubes interact withthe liquid medium to form a stable composition is not limited. Thus, forexample, the nanotubes may be suspended or dispersed in the liquidmedium or they may be solvated or solubilized in the liquid medium. Thestable applicator liquid typically forms a homogeneous distribution ofnanotubes in the liquid medium.

At the present time, it is desirable that the nanotubes remaindistributed in the liquid medium without substantial precipitation,flocculation or other macroscopic interaction, for at least one hour, orfor at least 24 hours, or even for at least one week. Substantialprecipitation and flocculation and the like can be detected by a varietyof methods. Precipitates and aggregates can be detected by visualinspection. Alternatively, precipitation or flocculation can be detectedby analytical techniques, such light scattering or absorbance, or byobservation of nanotubes once they are deposited on a substrate from thenanotube solution. A stable applicator liquid can exhibit prolongedsuspension (typically several weeks to few months) of the SWNT in themedium with little or no detectable change in the scattered lightintensity, or absorbance at a given wavelength, or viscosity.

Light scattering is measured using a monochromatic beam of lighttraveling through the solution. A change of light scattering intensityover time is recorded usually by a detector placed normal to the beamdirection or from multiple detectors placed at various angles includingthe right angle. Another indicator especially at low concentrations ofSWNT is the fall in absorbance (at a given wavelength) as a function oftime. Other methods of determining the stability of a nanotubeapplicator liquid for its intended purpose will be apparent to those ofskill in the art.

The nanotubes used in one or more embodiments of the present inventionmay be single walled nanotubes, multi-walled nanotubes, or mixturesthereof and may be of varying lengths. The nanotubes may be conductive,semiconductive or combinations thereof. Both conductive andsemiconductive SWNTs are useful in the manufacture of nanotube films,articles and devices and can be used in the nanotube applicator liquidaccording to one or more embodiments of the invention. Thus, theapplicator liquid may be integrated into current electronic fabricationprocesses including, by way of example, CMOS, bipolar-transistor,advanced memory and logic device, interconnect device, and chemical andbiological sensor fabrications.

In selecting a liquid medium for the nanotube composition, the intendedapplication for the applicator liquid may be considered. For example,the liquid medium of the present invention may be an aqueous liquidmedium that meets or exceeds purity specifications required in thefabrication of intended application. The semiconductor manufacturingindustry demands adherence to the specific standards set within thesemiconductor manufacturing industry for ultra-clean, static-safe,controlled humidity storage and processing environments. Many of thecommon nanotube handling and processing procedures are simplyincompatible with the industry standards. Furthermore, process engineerstend to resist trying unfamiliar technologies. According to one aspectof the present invention, a liquid medium for use in the applicatorliquid is selected based upon its compatibility or compliance with theelectronics and/or semiconductor manufacturing industry standards.

In one aspect of the invention, applicator liquids include a pluralityof single-walled nanotubes, multi-walled nanotubes, or mixtures thereofin water as the liquid medium. Water is readily available and acceptedinto all semiconductor foundries. The water used may be of high purityand may depend or be influenced by the end use application. For example,in CMOS applications the water may be high purity having a typicalresistance of about 18 megaohms. Water can be readily purified, creatinga particle free and contaminant free liquid. Water will generally notsolvate photoresists and is compatible with current and advancedphotoresists and lithographic processes.

Typical nanotube concentrations range from about 1 mg/L to 100 g/L, orfrom about 1 mg/L to 1 g/L, or about 10 mg/L, or about 100 mg/L, or evenabout 1000 mg/L with a common concentration used for memory and logicapplications of 100 mg/L. Such a concentration is exemplary; varioususeful concentrations ranges depend upon the application. For example inthe case where a monolayer fabric is desired, one could use a morediluted concentration with a single or a few applications of theapplicator liquid, e.g., by spin coating, to the substrate. In the eventthat a thick multilayer fabric is desired, a spraying technique could beemployed with a nearly saturated composition of nanotube in theapplicator liquid. The concentration is, of course, dependent upon thespecific liquid medium choice, method of nanotube dispersion and type ofnanotube used, e.g., single-walled or multiwalled.

Nanotubes may be prepared using methods that are well known in the art,for example, chemical vapor deposition (CVD) or other vapor phase growthtechniques (electric-arc discharge, laser ablation, etc.). Nanotubes ofvarying purity may also be purchased from several vendors, such asCarbon Nanotubes, Inc., Carbolex, Southwest Nanotechnologies, EliCarb,Nanocyl, Nanolabs, and BuckyUSA (these and other carbon nanotubesuppliers are known). Vapor-phase catalysts are typically used tosynthesize nanotubes and, as a result, the nanotubes are contaminatedwith metallic impurities. Furthermore, formation of nanotubes may alsobe accompanied by the formation of other carbonaceous materials, whichare also sources of impurities in the nanotubes.

In one or more embodiments of the present invention, metallic particlesand amorphous carbon particles may be separated from nanotubes. Thepurification process may reduce alkali metal ions, halogen ions,oligomers or polymers as active or inactive chemical components as partof the SWNT solution. The applicator liquids according to certainembodiments of the present invention may be substantially free of highlevels of these particulate and/or insoluble materials (as well as othersoluble materials that are incompatible with the semiconductingfabrication process). The nanotube solutions may thus be purified foruse in CMOS processing or other semiconducting fabrication process.

Appropriate purification techniques may desirably remove impuritieswithout affecting the nanotube chemical structure or electronicproperties. Impurities may be removed for example, by dispersing thenanotubes in an acid solution to dissolve metal impurities, followed byseparation of the nanotubes from the metallic solution. For example, anacid treatment with nitric acid or hydrochloric acid may be used. Thepurification technique may further treat the nanotubes with a base. Forexample, after treatment of the nanotubes with the acid, the nanotubesmay further be treated with a base such as NH₄OH (ammonia hydroxide),TMAH (tetramethylammonium hydroxide), or other alkyl ammonium bases. Thenanotubes may be treated with an acid and/or a base in a single ormultiple steps. In some embodiments, nanotubes may be treated with aconcentrated acid and then a mild acid to obtain a dilute acid solution.In some embodiments, the nanotubes may be treated to substantiallyneutralize a dilute acid solution. For example, a dilute acid solutionmay be neutralized to have a pH of about 6.5 to 7.5. Other suitablemethods for metal removal include magnetic purification.

Without being bound to theory, it may be possible that the acidtreatment serves at least a dual function of dissolving the metalimpurities and functionalizing the carbon nanotubes with carboxylic acidgroups to render them soluble in water. In addition, the acid treatmentmay further aid in breaking down any amorphous graphitic carbonimpurities present in the raw CNT and functionalizing them withcarboxylic acid groups as well. One or more additional acid treatment,possibly at weaker acidic conditions than the first acid treatment, mayaid in removing metal impurities. The base treatment may lead to asolubility difference between the derivative CNTs and derivatizedgraphitic carbon, rendering the derivatized amorphous graphitic carbonmore soluble in the liquid medium. Such solubility difference mayfacilitate separation of amorphous graphitic carbon and CNTs viasubsequent filtration and/or centrifugation.

Amorphous carbon may be removed, for example, by one or a combination ofhigh speed centrifugation. For example, non-limiting examples of highspeed centrifugation techniques may include ultracentrifugation, gravityfiltration, cross flow filtration, vacuum filtration and others. Gravityfiltration is a procedure wherein the dispersion can be filtered througha membrane under gravitational flow. Cross flow filtration is aprocedure where a shearing force normal to the filtration direction canbe applied by means of stirring or external, recirculative ornon-recirculative pumping. Vacuum filtration is a procedure where thefiltrate side of a membrane is subjected to a lower pressure to generatea differential pressure as a driving force for filtration.

Alternatively, particulate may be removed from the applicator liquids byusing continuous flow centrifuge at g forces between 60000-180000 andadequate flow rates. The usage of continuous flow centrifuge may lead tohigher quality products, reduced manufacturing time, and can be lesslabor intensive. Continuous flow centrifugation refers to a method toseparate or sediment particulate solids form a solution or suspensionusing centrifugal force applied with a continuous flow centrifuge. Thecontinuous flow centrifuge may allow for particulate separation orremoval from a solution in a continuous mode of operation of thecentrifuge. Any commercially available “high-g” centrifuges orultracentrifuges may be utilized. The continuous flow centrifuge mayhave the ability to separate particles from solution by continuouslyfeeding the solution to the centrifuge rotor, followed by particlesseparation or sedimentation, and continuous removal of the particulatefree product from the centrifuge rotor. For example, lab scalecontinuous flow ultracentrifuges (that are capable of generating up to10 L of particulate free product in one hour) or manufacturing scalecontinuous flow centrifuges (that are capable of generating to 100 Lparticulate free product in one hour) may be utilized. A non-limitingexample of a lab scale continuous flow ultracentrifuge may be theSorvall Discovery 90/100 with TCF32 rotor. A non-limiting example of amanufacturing scale continuous flow ultracentrifuge may be the SorvallCC40 or CC40S.

Yet other suitable purification techniques include the preferentialoxidation of non-fullerenic carbonaceous materials. The amorphous carbonas part of the original raw CNT soot or the graphitic shell carbon thatencases the catalyst metal nanoparticles can also be oxidized in anoxidation step prior to the acid treatment. This step called apre-oxidation step and can be conducted as a gas-solid reaction whichmay include water vapor along with an oxidative gas, such as air oroxygen, or in dry oxidative ambient in the absence of water.

Multiple purification steps may be desired in order to obtain nanotubesof a purity appropriate for use in a CMOS-grade nanotube solution. See,for example, Chiang, et al., J. Phys. ChemB 105, 1157 (2001); andHaddon, et al., MRS Bulletin, April 2004).

In one or more embodiments, nanotubes can be pretreated to reduce themetallic impurity levels to preselected levels. In certain embodiments,the applicator liquid of the present invention may consists of less than500 parts per billion (ppb), or less than about 200 ppb, or less thanabout 50 ppb, or less than about 25 ppb of trace metal impurities.Applicator liquids of the present invention may be used in themanufacture in CMOS compatible foundries of advanced electronic deviceswith finer features. For example, devices having fine features may bedevices having features of less than or equal to 250 nm in size.

Heavy metals, for example, metals having a specific gravity of greaterthan about 5 g/ml, are generally toxic in relatively low concentrationsto plant and animal life and tend to accumulate in the food chain.Examples include lead, mercury, cadmium, chromium, and arsenic. Suchcompounds are carefully regulated in the semiconductor fabricationindustry and are desirably maintained at minimum levels. In one or moreembodiments, the applicator liquids of the present invention, whenplaced on a surface, may include less than about 500 ppb, or less thanabout 200 ppb, or less than about 50 ppb, or less than about 25 ppb, orabout 0.1 to 10 ppb of trace heavy metal impurities.

Similarly, the concentration of group I and group II elements isregulated due to the deleterious effect of elements such as sodium,potassium, magnesium and calcium, and the like, on the performancecharacteristics of the electronic device. In one or more embodiments,the applicator liquids of the present invention, when placed on asurface, may include less than about 500 ppb, or less than about 200ppb, or less than about 50 ppb, or less than about 25 ppb, or about 1 to25 ppb of trace alkali (group I element) and alkaline earth (group IIelement) impurities.

Transition metals may also be avoided due to their ready migration andthe deleterious effect that such migration has on the deviceperformance. See, Mayer, et al. Electronic Materials Science: ForIntegrated Circuits in Si and GaAs, 2nd Ed, Macmilliam, New York, 1988.As is the case for heavy metals and group I and group II metals, it maybe desirable to maintain the impurity level of transition metals, suchas copper, iron, cobalt, molybdenum, titanium and nickel, to less thanpreselected values. In one or more embodiments of the present invention,the applicator liquids of the present invention, when placed on asurface, may include less than about 500 ppb, or less than about 200ppb, or less than about 50 ppb, or less than about 25 ppb, or about 0.1to 10 ppb of transition metal impurities.

For example, the Roadmap for Semiconductors (ITRS Roadmap) states thatat the 65 nm DRAM half-pitch mode, the critical particle size is 33 nmand only 1 particle/m³ is allowed over the critical size. From the ITRS2002 update, at the 90 nm DRAM half-pitch mode, the critical particlesize is 45 nm with only two particles/m³ allowed above the criticalparticle dimension. The ITRS Roadmap for 90 nm DRAM half-pitch modeallows for <15×10¹⁰ atoms/cm³ of metal contamination during fabrication.Liquid chemicals utilized for wafer fabrication may contribute <10particles/mL of surface contamination. Other fabrication specificationsmay be identified by the ITRS.

The semiconductor industry has well-established testing protocols formonitoring the particulate levels at, for example, 5 μm, 3 μm, 1 μm, 500nm, 300 nm and 100 nm. The metrology employed for detecting theparticulate contaminate will have a resolution of 0.2 nm. Typicalequipment include KLA Tencor surfscan™ and the like. Such testingmethods and equipment may be readily adapted for use in evaluating theparticulate levels of nanotube compositions.

In one or more embodiments of the present invention, the applicatorliquids may be aqueous, homogeneous mixture of purified single walledcarbon nanotubes at concentrations high enough to be useful in practicalapplications in the electronics industry, e.g., ≧10 mg/L. The applicatorliquids can be electronics-grade purity. In some embodiments, nanotubespurified to an impurity content of less than 0.2 wt %, or less than 0.1wt % free metal may be solubilized in pH-controlled water.

It has been surprisingly discovered that nanotubes that have beenpretreated to reduce the metallic and particulate impurity levels tobelow preselected levels, such as described herein, can form stablenanotube dispersions in water. One or more steps of grinding oragitating the nanotubes in the selected solvent and sonication mayenhance homogeneity.

The applicator liquids of the present invention can be appropriate foruse as a spin-on SWNT solution for electronic and electronic packagingapplications. The addition of various optional additives may be usefulto facilitate long term storage and stabilization properties of carbonnanotube applicator liquids. Such additives include, but are not limitedto stabilizers, surfactants and other chemicals known or accepted asadditives to solutions used for fabrication of electronics. However, theapplicator liquids of the present invention may also be free orsubstantially free of additional additives.

The applicator liquids according to one or more embodiments of thepresent invention and the methods of making the applicator liquids ofnanotubes have been standardized for CMOS compatibility as required inconventional semiconductor fabrication systems, i.e. the chemicals, spincoating tracks and other related machineries necessary to create thesolutions of the present invention may be found in typical CMOSprocessing facilities or more generally may be present in many types ofservices common to the electronics industry including fabrication andpackaging facilities.

The applicator liquid can be placed or applied on a substrate to obtaina nanotube film, fabric or other article. A conductive article includesan aggregate of nanotubes (at least some of which are conductive), inwhich the nanotubes contact other nanotubes to define a plurality ofconductive pathways in the article. The nanotube fabric or filmdesirably has a uniform porosity or density; in many applications, it isa monolayer. FIGS. 1 and 2 are micrographs of fabrics made from watersoluble nanotubes spun onto a substrate.

A semiconductive article comprising semiconducting nanotubes includes anaggregate of semiconducting nanotubes in which the nanotubes contactother nanotubes to define a plurality of semiconductive pathways in thearticle. The nanotube fabric or film desirably has a uniform porosity ordensity: in many applications, it is a monolayer. Such a semiconductivefabric may be used as an element in a field effect transmitter, e.g. foruse as a channel.

Many methods exist for the application procedure including spin coating,spray coating, coating, dipping and many others known for dispersingsolutions onto substrates. For thicker fabrics beyond a monolayer, moreapplications or more concentrated solutions may be required. In factother techniques for application of the applicator liquid onto asuitable substrate may be required as has been outlined elsewhere (SeeNanotube Films and Articles (U.S. Pat. No. 6,706,402) filed Apr. 23,2002 and Methods of Nanotube Films and Articles (U.S. patent applicationSer. No. 10/128,117) filed Apr. 23, 2002, both of which are herebyincorporated by reference herein in their entirety).

In one or more embodiments, the nanotube film, fabric or other articlemay contain less than about 10¹⁸ atoms/cm² of metal impurities, or lessthan about 10¹⁶ atoms/cm² of metal impurities, or less than about 10¹⁴atoms/cm² of metal impurities, or less than about 10¹² atoms/cm² ofmetal impurities, or less than about 10¹⁰ atoms/cm² of metal impurities.Nanotube film, fabric or other article having lower levels of metallicimpurities, for example, 10¹⁰-10¹² atoms/cm², may be used in themanufacture of advanced devices having fine features. For example,devices having fine features may be devices having features of less thanor equal to 250 nm.

In one or more embodiments, the nanotube film, fabric or other articlemay include less than about 10¹⁸ atoms/cm² of heavy metal impurities, orless than about 10¹⁶ atoms/cm² of heavy metal impurities, or less thanabout 10¹⁴ atoms/cm² of heavy metal impurities, or less than about 10¹²atoms/cm² of heavy metal impurities or even less than about 15×10¹⁰atoms/cm² of heavy metal impurities.

In one or more embodiments, the nanotube film, fabric or other articlemay include less than about 10¹⁸ atoms/cm² of group I and group IIelement impurities, or less than about 10¹⁶ atoms/cm² of group I andgroup II element impurities, or less than about 10¹⁴ atoms/cm² of groupI and group II element impurities, or less than about 10¹² atoms/cm² ofgroup I and group II element impurities or even less than about 15×10¹⁰atoms/cm² of group I and group II element impurities.

As is the case for heavy metals and group I and group II metals, it maybe desirable to maintain the impurity level of transition metals, suchas copper, iron, cobalt, molybdenum, titanium; and nickel, to less thanpreselected values. In one or more embodiments of the present invention,the nanotube film, fabric or other article may include less than about10¹⁸ atoms/cm² of transition metal impurities, or less than about 10¹⁶atoms/cm² of transition metal impurities, or less than about 10¹⁴atoms/cm² of transition metal impurities, or less than about 10¹²atoms/cm² of transition metal impurities or even less than about 15×10¹⁰atoms/cm² of transition metal impurities.

The use of the term “about” reflects the variation that occurs inmeasurement and can range up to 30% of the measured value. For example,when determining metal impurity levels using VPD ICP-MS, the accuracy ofthe measurement is related to the precision of analytical signals, therecovery of trace metals from the wafer surface, and the accuracy of thestandards used. Overall accuracy of the VPD ICP-MS technique varies from±15%, at concentration levels higher than 10 times above the methoddetection limit, to ±30% or higher at concentration levels lower than 10times the detection limits. Similar variability is expected in othermeasurements.

The following examples are provided to illustrate the invention, whichis not intended to be limiting of the invention, the scope of which isset forth in the claims which follow.

EXAMPLE 1

This example describes the purification of nanotubes.

Single-walled carbon nanotubes (SWNTs) were purified by mixing 1 g ofcarbon nanotubes with a 125 mL:125 mL mixture of 15 M nitric acid(HNO₃):DI water. The nanotube:nitric acid:DI mixture was stirred for 8hours and refluxed for 12 hours at 125° C. After purification, the 250mL nanotube:nitric acid solution was diluted with 7 parts DI water (˜1.8L). The pH of the solution was adjusted to 1.5±0.1 by dropwise additionof concentrated NH₄OH ([c]˜35%). The solution was then sonicated for 60minutes in a chilled sonication bath at 4-5° C. Once sonication wascompleted, cross-flow filtration was then performed with a dedicated 0.5micron ceramic membrane. The filtration was performed until the liquidthat passes through the pores of the filter membrane obtained a pH of4.0. This liquid is called a permeate and was rejected. The liquid thatdoes not pass through the pores of the filter membrane is called aretentate and was recovered. The pH of the retentate was thenre-adjusted to 7.1 by adding a low (0.1% w/V) concentration of NH₄OH tothe liquid. The liquid was then sonicated again for 2 hours in a 4-5° C.sonication bath. The liquid was then allowed to soak for another 2hours. The resulting applicator liquid was then qualified by spincoating the solution onto a desired non-conducting substrate such assilicon dioxide. The applicator liquid was spin-coated on the substrateby applying 4-6 mL of aqueous solution to a 100 mm diameter silicondioxide substrate. The applicator liquid dispensed on the substrate wasfirst spun at 60 rpm for 20 seconds, followed by a 1 second 500 rpmspin, a 180 second 60 rpm spin and a 20 second 2000 rpm spin to dry thewafer. After a single coating, a sheet resistance of 1.3-1.4 kΩ/sq wasproduced on the substrate.

To remove the amorphous carbon and other small particles, another crossflow filtration process was performed. An initial liquid metric wastaken by measuring the optical density of the solution. At this stagethe optical density of the liquid was about 0.5-4.0 at a wavelength of550 nm. The cross flow filtration was performed until the permeate'soptical density was about 0.012±0.005. After filtration, the liquid wassoaked for 12 hours, followed by another sonication for 2 hours in achilled 4-5° C. bath. Another liquid qualification was performed afterthis step to verify the conductivity of a resulting spun-on fabric.Employing the same spin procedure as above, a fabric having a surfaceresistance of 5-10 kΩ/sq is produced. Centrifugation was then performedto remove the larger particles (molecular weight species) in the liquid.An initial centrifugation step was performed at 25,000 rpm for 2 hours.The remaining liquid was then manually (by hand) transferred from thecentrifugation vial into another vial. The sediment was discarded. Asecond centrifugation step was then performed at 25,000 rpm for 75minutes. To ensure that there was no contamination of the solution afterthis centrifugation step, the liquid was transferred to an adequatecontainer through a pump process, avoiding any possible humancontamination or other extraneous contaminants. A final liquidqualification was performed by another spin coating process. Repeatingthe same spin-coating process as above, a fabric with a sheet resistanceof 4-5 kΩ/sq was produced on a silicon dioxide wafer after one spincoat.

The applicator liquid produced herein can be used to form a component ofNRAM memories, such as described in U.S. Pat. No. 6,919,592, entitled“Electromechanical Memory Array Using Nanotube Ribbons and Method forMaking Same,” filed Jul. 25, 2001; U.S. Pat. No. 6,643,165, entitled“Electromechanical Memory Having Cell Selection Circuitry Constructedwith Nanotube Technology,” filed Jul. 25, 2001; U.S. patent applicationSer. No. 10/810,962, entitled “NRAM Bit Selectable Two-Drive NanotubeArray,” filed Mar. 26, 2004; and U.S. patent application Ser. No.10/810,963, entitled “NRAM Byte/Block Released Bit Selectable One-DeviceNanotube Array,” filed Mar. 26, 2004. The solution holds potential as astand-alone commercial product to serve the research and developmentlaboratories that work on single-walled carbon nanotubes as well otherapplications.

In order to avoid recontamination of the nanotubes, clean roomconditions, for example, Class 100 or greater, were maintained duringpreparation and processing of the applicator liquid.

EXAMPLE 2

In addition to the examples given above, various pre-oxidation schemeswere also used to purify the carbon nanotubes. Without being bound totheory, pre-oxidation process may remove amorphous carbon impurities andalso may crack open the graphitic shells that cover the metal catalysts,thereby rendering them accessible to subsequent acid treatment.

In one example, carbon nanotubes were purified by mixing 1 g of carbonnanotubes with 100 mL of 30% H₂O₂. The nanotube:hydrogen peroxide wasrefluxed for 3 h at 110° C. After the pre-oxidation step, the 100 mLnanotube:peroxide solution was diluted with 10 parts DI water (˜1L). Thenanotube:peroxide:DI water slurry was sonicated for 60 minutes in achilled sonication bath at 4-5° C. The slurry was then vacuum filteredover 5 micron Teflon filter membrane. The solid was collected from thetop of the filter membrane and taken through the next processing steps,as described below.

After the pre-oxidation step described above, the material was refluxedin microelectronics grade nitric acid. The concentration of the nitricacid, the reflux time and temperature were optimized based on thestarting CNT material. For example, CNTs were refluxed in concentratednitric acid (15M) at 125° C. for 24 h. After the nitric acid refluxstep, the CNT suspension in acid was diluted in 0.35% nitric acidsolution (˜2L) and taken through several passes of cross-flow filtration(CFF). First few passes of CFF (hereinafter called CFF1) may remove theacid and soluble metal salts in the suspension. The pH of the suspensionduring the CFF1 steps was maintained at 1±0.3 by recovering the materialin 0.35% nitric acid after each step. Typically five CFF1 steps wereperformed. After the CFF1 steps, the retentate was collected in DI waterand the pH of the nanotube:DI water suspension was increased to 9±0.2with ammonium hydroxide (concentration 29%) and sonicated. The CNTsuspension in DI water was rendered into an optically transparentliquid. This liquid was taken through another set of CFF passes(hereinafter referred as CFF2). CFF2 may remove the amorphous carbonimpurities in the solution. CFF2 was performed until optical density ofthe permeate was about 0.012±0.005. After the CFF2 process, theretentate was collected in DI water and the pH of the nanotube:DI waterliquid was adjusted to pH 8±0.2 and the solution was sonicated for 120minutes in a chilled sonicator bath (4-5° C.). Finally, the solution wascentrifuged about three times at about 70000 g for about 1 h. In certaincases, the pH of the solution was adjusted to 8±0.2 in between thecentrifugation passes which may remove residual metal or carbonnanoparticles in the liquid by sedimentation. After the centrifugationstep, the supernatant was collected and used as the final CMOS gradeapplicator liquid.

The applicator liquid produced herein can also be used to form acomponent of NRAM memories, such as described in U.S. Pat. No.6,919,592, entitled “Electromechanical Memory Array Using NanotubeRibbons and Method for Making Same,” filed Jul. 25, 2001; U.S. Pat. No.6,643,165, entitled “Electromechanical Memory Having Cell SelectionCircuitry Constructed with Nanotube Technology,” filed Jul. 25, 2001;U.S. patent application Ser. No. 10/810,962, entitled “NRAM BitSelectable Two-Drive Nanotube Array,” filed Mar. 26, 2004; and U.S.patent application Ser. No. 10/810,963, entitled “NRAM Byte/BlockReleased Bit Selectable One-Device Nanotube Array,” filed Mar. 26, 2004.The solution holds potential as a stand-alone commercial product toserve the research and development laboratories that work onsingle-walled carbon nanotubes as well other applications.

In order to avoid recontamination of the nanotubes, clean roomconditions, for example, Class 100 or greater, were maintained duringpreparation and processing of the applicator liquid.

EXAMPLE 3

This example describes a gas phase pre-oxidation of carbon nanotubes.For example, 1 g of carbon nanotubes were heated in a flow ofnitrogen-oxygen mixture (2:1 ratio) at 350° C. for 12 h. The gas-phasepre-oxidized carbon nanotube material was taken through the nitric acidtreatment, cross flow filtration and centrifugation steps as describedin Example 2 to produce an applicator liquid.

The applicator liquid produced herein can also be used to form acomponent of NRAM memories, such as described in U.S. Pat. No.6,919,592, entitled “Electromechanical Memory Array Using NanotubeRibbons and Method for Making Same,” filed Jul. 25, 2001; U.S. Pat. No.6,643,165, entitled “Electromechanical Memory Having Cell SelectionCircuitry Constructed with Nanotube Technology,” filed Jul. 25, 2001;U.S. patent application Ser. No. 10/810,962, entitled “NRAM BitSelectable Two-Drive Nanotube Array,” filed Mar. 26, 2004; and U.S.patent application Ser. No. 10/810,963, entitled “NRAM Byte/BlockReleased Bit Selectable One-Device Nanotube Array,” filed Mar. 26, 2004.The solution holds potential as a stand-alone commercial product toserve the research and development laboratories that work onsingle-walled carbon nanotubes as well other applications.

In order to avoid recontamination of the nanotubes, clean roomconditions, for example, Class 100 or greater, were maintained duringpreparation and processing of the applicator liquid.

EXAMPLE 4

In this example, 0.3 g of single-walled carbon nanotubes were heated inmoist gas at 250° C. for 12 h by bubbling the nitrogen-oxygen mixturethrough a water bubbler. The water bubbler can be maintained at anytemperature from room temperature up to about 80° C. The pre-oxidizedcarbon nanotube material was taken through the nitric acid treatment,cross flow filtration and centrifugation steps as described in Example 2to produce an applicator liquid.

The liquid applicator produced herein can also be used to form acomponent of NRAM memories, such as described in U.S. Pat. No.6,919,592, entitled “Electromechanical Memory Array Using NanotubeRibbons and Method for Making Same,” filed Jul. 25, 2001; U.S. Pat. No.6,643,165, entitled “Electromechanical Memory Having Cell SelectionCircuitry Constructed with Nanotube Technology,” filed Jul. 25, 2001;U.S. patent application Ser. No. 10/810,962, entitled “NRAM BitSelectable Two-Drive Nanotube Array,” filed Mar. 26, 2004; and U.S.patent application Ser. No. 10/810,963, entitled “NRAM Byte/BlockReleased Bit Selectable One-Device Nanotube Array,” filed Mar. 26, 2004.The solution holds potential as a stand-alone commercial product toserve the research and development laboratories that work onsingle-walled carbon nanotubes as well other applications.

In order to avoid recontamination of the nanotubes, clean roomconditions, for example, Class 100 or greater, were maintained duringpreparation and processing of the liquid applicator.

EXAMPLE 5

In this example, 3 g of carbon nanotubes were mixed with 180 mL ofconcentrated sulfuric acid and 60 mL of concentrated nitric acid. Themixture was sonicated for 1 h in a chilled sonicator bath (4-5° C.).

After this pre-oxidation step the nanotube:acid slurry was filtered andthe solid material was mixed with 150 mL 30% H₂O₂ and 150 mL DI water.The pre-oxidized nanotube:peroxide:DI water mixture was refluxed at 100°C. for 3 h. After the second pre-oxidation step, the 300 mLnanotube:peroxide solution was diluted with 6 parts DI water (˜1L). Thenanotube:peroxide:DI water slurry was sonicated for 60 minutes in achilled sonication bath at 4-5° C. The slurry was then vacuum filteredover 5 micron Teflon filter membrane. The solid was collected from thetop of the filter membrane and taken through the nitric acid treatment,cross flow filtration and centrifugation steps as described in Example 2to produce an applicator liquid.

The applicator liquid produced herein can also be used to form acomponent of NRAM memories, such as described in U.S. Pat. No.6,919,592, entitled “Electromechanical Memory Array Using NanotubeRibbons and Method for Making Same,” filed Jul. 25, 2001; U.S. Pat. No.6,643,165, entitled “Electromechanical Memory Having Cell SelectionCircuitry Constructed with Nanotube Technology,” filed Jul. 25, 2001;U.S. patent application Ser. No. 10/810,962, entitled “NRAM BitSelectable Two-Drive Nanotube Array,” filed Mar. 26, 2004; and U.S.patent application Ser. No. 10/810,963, entitled “NRAM Byte/BlockReleased Bit Selectable One-Device Nanotube Array,” filed Mar. 26, 2004.The solution holds potential as a stand-alone commercial product toserve the research and development laboratories that work onsingle-walled carbon nanotubes as well other applications.

In order to avoid recontamination of the nanotubes, clean roomconditions, for example, Class 100 or greater, were maintained duringpreparation and processing of the applicator liquid.

Materials and Equipment:

All the materials such as reaction vessels, sonication flasks, refluxcondensers and collection vessels were fabricated out of low alkaliquartzware in order to produce CMOS grade carbon nanotube solution.Without being bound to theory, this factor may be important becauserefluxing strong acids such as nitric acid in ordinary glasswareintroduces alkali metal impurities due to leaching of these metals fromthe vessels. Nantero, Inc., the assignee of the present application, hasgenerated data showing that refluxing concentrated nitric acid in lowalkali quartzware do not introduce any alkali metal impurities. Anotherfactor relating to equipment may be the use of O-ring joints for thereaction vessels that can withstand aggressive acid environment as wellas high temperatures.

Chemicals:

All chemicals used in the process, such as nitric acid, hydrogenperoxide, ammonium hydroxide and sulfuric acid are microelectronicsgrade. For example, Finyte grade chemicals from JTBaker can be used.

CFF Membranes:

The ceramic membranes used for filtration are alpha-phased alumina witha pore size of about 0.1 to 12 micron. Preferably, membranes with poresize of 0.3 to 5 micron, or even more preferably, membranes with poresize of 0.4 to 1.5 micron can be used. The ceramic membranes arechemically stable at pH of 0 to 14 and the amount of metals leached inthe working conditions are minimal, preferably less than 50 ppb, andeven more preferably less than 10 ppb. Moreover, the membranes can beencased in a material which will substantially be chemically inertduring the processing. The ceramic membranes can provide the necessarysurface area for an efficient filtration of about 19-37 channels,internal diameter of each channels of about 3, 4, or 6 mm, and lengthsof each channels ranging from about 0.1 to 10 m. The ceramic membranescan be used one by one or can be used as modules of multiple membranesas required by the scale of production.

Comparative Centrifugation

Nanotubes were centrifuged in two different procedures with all otherparameters kept the same. First, nanotubes were subjected to batchcentrifugation in a Beckman centrifuge at 25,000 rpm (equivalent to75,600 g); total centrifugation time 3 h. The resulting solutionresulted in absorption of OD=3.167 at 550 nm; a monolayer film made ofthe nanotubes from this solution exhibited resistance values of 5 to 9kohm. FIG. 3A is a micrograph of a fabric of nanotubes created withbatch centrifugation and FIG. 3B is a micrograph of the same fabric athigher magnification.

Next, nanotubes were subjected to continuous flow centrifugation in aSorvall Discovery 90 centrifuge with a continuous flow rotor at 26,100rpm equivalent to the same g force as for the batch centrifuge; the flowrate of the feed was set at a value to allow for the same residence timein the continuous flow rotor as in the batch rotor. The resultingsolution resulted in absorption of OD=1.615 at 550 nm; a monolayer filmmade of the nanotubes from this solution exhibited resistance values of6.5 to 8 kohm. The solution centrifuged in the continuous mode led tocleaner material, necessitating less processing time, contained lessamorphous carbon, and the fabric obtained exhibited lower resistance atthe same solid concentration. FIG. 4A is a micrograph of a fabric ofnanotubes created with continuous flow centrifugation and FIG. 4B is amicrograph of the same fabric at higher magnification. Observation ofFIGS. 3A and B and 4A and B show, to the naked eye, that continuous flowcentrifugation leads to cleaner solution.

OTHER EMBODIMENTS

In alternate embodiments of the present invention, each individual stepof the solubilization process is detailed in the above examples for thesolubilization of SWNTs in water. It should be noted that CNTs and SWNTscan be used interchangeably in all of the methods described herein. Manyother methods of forming such an applicator liquid are possible byadding or subtracting steps involving agitation and solubilizationdepending upon the specific requirements for concentration, solutionstability and ultimate performance metrics of the desired fabric.

Moreover, the applicator liquids of the present invention need notnecessarily be homogeneously distributed in a liquid medium containingwater, or containing substantially water, or even containing only water.For example, the liquid medium contain or be predominantly organicsolvents such as ethyl lactate, dimethyl sulfoxide (DMSO), monomethylether, 4-methyl-2 pentanone, N-methylpyrrolidone (NMP), t-butyl alcohol,methoxy propanol, propylene glycol, ethylene glycol,gamma-butyrolactone, benzyl benzoate, salicylaldehyde, tetramethylammonium hydroxide, and esters of alpha-hydroxy carboxylic acids. Inother embodiments, the liquid medium may contain or be predominantly anon-halogenated solvent.

In certain embodiments, concentrations of metallic or carbonaceouscontamination that are above those required for CMOS fabrication may beacceptable. The present invention serves to exemplify creation ofnanotube applicator liquids with stringent requirements that meet orexceed those of a CMOS process flow but can be modified in applicationsthat have relaxed requirements.

In certain embodiments the concentration of SWNT in the applicatorliquid may be modified or tailored to form thick nanotube coatings up to100 microns thick or more and as thin as a monolayer of SWNTs. Suchnanotube fabrics can be characterized by resistivity or capacitancemeasurements to meet the requirements of the specific electronicsapplication.

As described herein, certain applicator liquids and applicationtechniques are described, which can be used to form nanotube films orfabrics of controlled properties. For example, certain proposals havebeen made suggesting the benefits of substantially monolayers ofnanotubes with substantially uniform porosity. Techniques have beenprovided in which one or more parameters may be controlled or monitoredto create such films. Moreover, these liquids are intended forindustrial environments, which require that the liquids be usable, i.e.that the nanotube suspension is stable, for periods of days, weeks andeven months.

1. An applicator liquid comprising: one or more carbon nanotubes and anelectronics-grade liquid medium comprising water, wherein the carbonnanotubes are distributed in the liquid medium without substantialprecipitation, flocculation or other macroscopic interaction and canremain separated for about at least one week, wherein the nanotubes areat a concentration of greater than or equal to 10 mg/L, wherein thenanotubes are pretreated to reduce a level of metal impurities to lessthan about 1×10¹⁸ atoms/cm³, wherein the applicator liquid issubstantially free of polymers and surfactants, and wherein theapplicator liquid is substantially free of particulates having adiameter greater than about 500 nm.
 2. The applicator liquid of claim 1,wherein the applicator liquid meets or exceeds specifications for use inclass 1 semiconductor fabrication facility.
 3. The applicator liquid ofclaim 1, wherein the applicator liquid is substantially free of metallicimpurities.
 4. The applicator liquid of claim 1, wherein the applicatorliquid is substantially free of amorphous carbon impurities.
 5. Theapplicator liquid of claim 1, wherein the applicator liquid comprisesless than 500 parts per billion of metallic impurities.
 6. Theapplicator liquid of claim 1, wherein the applicator liquid comprisesless than 200 parts per billion of metallic impurities.
 7. Theapplicator liquid of claim 1, wherein the applicator liquid comprisesless than 50 parts per billion of metal impurities.
 8. The applicatorliquid of claim 1, wherein the applicator liquid comprises less than 500parts per billion of heavy metal impurities.
 9. The applicator liquid ofclaim 1, wherein the applicator liquid comprises from 0.1 to 10 partsper billion of heavy metal impurities.
 10. The applicator liquid ofclaim 1, wherein the applicator liquid comprises less than 500 parts perbillion of alkali (group I element) and alkaline earth (group IIelement) impurities.
 11. The applicator liquid of claim 1, wherein theapplicator liquid comprises from 1 to 25 parts per billion of alkali(group I element) and alkaline earth (group II element) impurities. 12.The applicator liquid of claim 1, wherein the applicator liquidcomprises less than 500 parts per billion of transition metalimpurities.
 13. The applicator liquid of claim 1, wherein the applicatorliquid comprises from 0.1 to 10 parts per billion of transition metalimpurities.
 14. The applicator liquid of claim 1, wherein the applicatorliquid is substantially free of particle impurities having a diameter ofgreater than about 300 nm.
 15. The applicator liquid of claim 1, whereinthe applicator liquid is substantially free of particle impuritieshaving a diameter of greater than about 45 nm.
 16. The applicator liquidof claim 1, wherein the carbon nanotubes comprise conductive nanotubes.17. The applicator liquid of claim 1, wherein the carbon nanotubescomprise semiconductive nanotubes.
 18. The applicator liquid of claim 1,wherein the carbon nanotubes comprise single-walled carbon nanotubes.19. The applicator liquid of claim 1, wherein the carbon nanotubescomprise multi-walled carbon nanotubes.
 20. The applicator liquid ofclaim 1, wherein the applicator liquid comprise nanotubes at aconcentration of greater than 100 mg/L.
 21. The applicator liquid ofclaim 1, wherein the applicator liquid comprise nanotubes at aconcentration of greater than 1000 mg/L.
 22. A method for making theapplicator liquid of claim 1, the method comprising: a) contacting oneor more carbon nanotubes with a liquid medium comprising water to obtaina mixture; and b) removing impurities from the carbon nanotubes toobtain the applicator liquid, wherein the applicator liquid meets orexceeds specifications for use in class 1 semiconductor fabricationfacility.
 23. The method of claim 22, wherein the applicator liquid ispurified to comprise less than 500 parts per billion of metallicimpurities.
 24. The method of claim 22, wherein the applicator liquid ispurified to comprise less than 200 parts per billion of metallicimpurities.
 25. The method of claim 22, wherein the applicator liquid ispurified to comprise less than 50 parts per billion of metal impurities.26. The method of claim 22, wherein the applicator liquid is purified tocomprise less than 500 parts per billion of heavy metal impurities. 27.The method of claim 22, wherein the applicator liquid is purified tocomprise from 0.1 to 10 parts per billion of heavy metal impurities. 28.The method of claim 22, wherein the applicator liquid is purified tocomprise less than 500 parts per billion of alkali (group I element) andalkaline earth (group II element) impurities.
 29. The method of claim22, wherein the applicator liquid is purified to comprise from 1 to 25parts per billion of alkali (group I element) and alkaline earth (groupII element) impurities.
 30. The method of claim 22, wherein theapplicator liquid is purified to comprise less than 500 parts perbillion of transition metal impurities.
 31. The method of claim 22,wherein the applicator liquid is purified to comprise from 0.1 to 10parts per billion of transition metal impurities.
 32. The method ofclaim 22, wherein the applicator liquid is substantially free ofparticle impurities having a diameter of greater than about 300 nm. 33.The method of claim 22, wherein the applicator liquid is substantiallyfree of particle impurities having a diameter of greater than about 45nm.
 34. The method of claim 22, wherein the carbon nanotubes compriseconductive nanotubes.
 35. The method of claim 22, wherein the carbonnanotubes comprise semiconductive nanotubes.
 36. The method of claim 22,wherein the carbon nanotubes comprise single-walled carbon nanotubes.37. The method of claim 22, wherein the carbon nanotubes comprisemulti-walled carbon nanotubes.
 38. The method of claim 22, wherein theapplicator liquid comprise nanotubes at a concentration of greater than100 mg/L.
 39. The method of claim 22, wherein the applicator liquidcomprise nanotubes at a concentration of greater than 1000 mg/L.
 40. Themethod of claim 22, wherein step b) comprises performing a filtrationprocess.
 41. The method of claim 40, wherein the filtration process is across-flow filtration process.
 42. The method of claim 22, wherein stepb) comprises performing a centrifugation process.
 43. The method ofclaim 42, wherein the centrifugation process comprises a continuous flowcentrifugation.
 44. The method of claim 22, wherein step b) is carriedafter or simultaneously with step a).
 45. The method of claim 44,wherein step b) comprises performing a sonication process.
 46. Themethod of claim 44, wherein step b) comprises contacting the carbonnanotubes with an acid.
 47. The method of claim 46, wherein step b)comprises contacting the mixture with a base.
 48. The method of claim47, wherein base is added to substantially neutralize the mixture.
 49. Amethod for making the applicator liquid of claim 1: a) contacting one ormore carbon nanotubes with a liquid medium comprising water and an acidto obtain a mixture; b) contacting the mixture with a base; and c)removing soluble and particulate impurities, wherein the applicatorliquid meets or exceeds specifications for use in class 1 semiconductorfabrication facility.
 50. The method of claim 49, wherein the base isadded to neutralize the mixture.
 51. The method of claim 49, whereinstep a) comprises performing a sonciation process.
 52. The method ofclaim 49, wherein step c) comprises performing a centrifugation process.53. The method of claim 49, wherein step c) comprises performing afiltration process.